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<p>This research paper investigates the potential use of indium-doped zinc oxide (IZO) as a window layer in solar cells. To achieve this, the heterostructure Al/ITO/IZO/CdTe/ back contact was simulated using SCAPS-1D, demonstrating its viability. The thickness and carrier concentration of both IZO and CdTe were systematically varied to optimize their values and optimal values was found to be 0.05&#xa0;μm and N<sub>D</sub>=10<sup>20</sup> cm<sup>−3</sup> for IZO and 3.0&#xa0;μm and N<sub>A</sub>=10<sup>16</sup> cm<sup>−3</sup> for CdTe respectively. Furthermore, the study explored the influence of defect density of IZO/CdTe interface on performance of solar cell, interval of simulation was from 10<sup>10</sup> to 10<sup>15</sup> cm<sup>−2</sup> the better performance was obtained at lower defect density. Optimum shunt and series resistance values are in the interval of 3000–5000 Ω<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:{\bullet\:cm}^{2}\)</EquationSource> </InlineEquation> and 1–5 Ω<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\:{\bullet\:cm}^{2}\)</EquationSource> </InlineEquation> respectively. Finally, it was demonstrated by extensive optimization of these parameters and using ITO as TCO and Pt as back contact, the highest predicted efficiency was 25.24%, with Voc of 0.96&#xa0;V and Jsc of 30.12&#xa0;mA/cm².</p>

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Theoretical Optimization of Environmentally Friendly Alternative Indium-Doped Zinc Oxide (IZO) in CdTe Solar Cell Technology by SCAPS-1D

  • 期刊论文

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  • 发表日期：

    2025年10月24日

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  • A. Cristina Carranza,
  • Enrique Rosendo,
  • J. Carlos Zepeda,
  • Crisóforo Morales,
  • Eduardo Camacho,
  • Leticia Treviño,
  • Godofredo García,
  • Román Romano,
  • Antonio Coyopol,
  • Reina Galeazzi

摘要

This research paper investigates the potential use of indium-doped zinc oxide (IZO) as a window layer in solar cells. To achieve this, the heterostructure Al/ITO/IZO/CdTe/ back contact was simulated using SCAPS-1D, demonstrating its viability. The thickness and carrier concentration of both IZO and CdTe were systematically varied to optimize their values and optimal values was found to be 0.05 μm and ND=1020 cm−3 for IZO and 3.0 μm and NA=1016 cm−3 for CdTe respectively. Furthermore, the study explored the influence of defect density of IZO/CdTe interface on performance of solar cell, interval of simulation was from 1010 to 1015 cm−2 the better performance was obtained at lower defect density. Optimum shunt and series resistance values are in the interval of 3000–5000 Ω \(\:{\bullet\:cm}^{2}\) and 1–5 Ω \(\:{\bullet\:cm}^{2}\) respectively. Finally, it was demonstrated by extensive optimization of these parameters and using ITO as TCO and Pt as back contact, the highest predicted efficiency was 25.24%, with Voc of 0.96 V and Jsc of 30.12 mA/cm².