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<p>The demand of Electronics systems has been increasing rapidly for military, and space electronics applications. Radiations in environment are capable to alter the principal properties of electronics devices and systems. Radiations predominantly affect the metal oxide semiconductor (MOS) transistors among the several electronic devices by producing radiation generated Total Ionizing Dose (TID) effects, single event effects (SEEs), and third one is heavy ion displacement damages. Oxides and insulators in MOS devices are more susceptible towards charged hadrons, electrons, gammas and neutrons, leading to degradation and failure of devices. This paper reviews the radiations response to the silicon on Insulator (SOI) technology and advanced multigate 3D transistor such as FinFET, Gate-all-around (GAA) Nanowire and Nanotube transistor. 3D devices have shown enormous tolerance towards radiations. Radiations effect to FinFET and GAA 3D transistor with different channel and dielectric material, and different radiation hardening techniques has also been discussed and analyzed. The performance of GAA nanosheet FETs and Carbon Nanotube/ribbon FETs has also been analyzed under the influence of radiations.</p>

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Radiations Effects on Advanced Multi-gate 3D Devices and Materials

  • 期刊论文

  • 发表日期：

    2025年7月26日

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  • Raj Kumar,
  • Vakkalakula Bharath Sreenivasulu,
  • Jeetendra Singh,
  • Shashi Bala

摘要

The demand of Electronics systems has been increasing rapidly for military, and space electronics applications. Radiations in environment are capable to alter the principal properties of electronics devices and systems. Radiations predominantly affect the metal oxide semiconductor (MOS) transistors among the several electronic devices by producing radiation generated Total Ionizing Dose (TID) effects, single event effects (SEEs), and third one is heavy ion displacement damages. Oxides and insulators in MOS devices are more susceptible towards charged hadrons, electrons, gammas and neutrons, leading to degradation and failure of devices. This paper reviews the radiations response to the silicon on Insulator (SOI) technology and advanced multigate 3D transistor such as FinFET, Gate-all-around (GAA) Nanowire and Nanotube transistor. 3D devices have shown enormous tolerance towards radiations. Radiations effect to FinFET and GAA 3D transistor with different channel and dielectric material, and different radiation hardening techniques has also been discussed and analyzed. The performance of GAA nanosheet FETs and Carbon Nanotube/ribbon FETs has also been analyzed under the influence of radiations.