Fabrication and Ameliorating the Performance of PS/SiO2-Sb2O3 Futuristic Films for High Energy Storage Capacitors and Biomedical Applications
摘要
This work aims to fabricate of PS/SiO₂-Sb₂O₃ promising films to apply in many nanoelectronics and food packing applications. The microstructure, morphological and dielectric properties of PS/SiO₂-Sb₂O₃ films were investigated. The PS/SiO₂-Sb₂O₃ films were applied for futuristic biomedical and nanoelectronics fields. The results indicated that the dielectric parameters of PS increased from 3.13 to 3.29 with increasing the SiO₂-Sb₂O₃ content to 6.9 wt% at 100 Hz. The conductivity increased from 9.4 × 10–12 S/cm to 1.33 × 10–12 S/cm with increasing the SiO₂-Sb₂O₃ content to 6.9 wt% at 100 Hz. These results are welcomed in many energy storage and nanoelectronics fields. The obtained result of antibacterial application showed that the diameter of the inhibition zone was increased with the increase of (SiO₂-Sb₂O₃) NPs content. Finally, the PS/SiO₂-Sb₂O₃ nanocomposites exhibited excellent dielectric properties and high activity for antibacterial which making them as promising nanomaterials to apply various optoelectronics and biomedical applications.