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<p>This paper presents a comprehensive performance analysis of various dielectric material passivation layers on AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) for both DC and RF applications. The results obtained demonstrate that employing different high-k dielectrics (including SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, HfO<sub>2</sub>, La<sub>2</sub>O<sub>3</sub>, and TiO<sub>2</sub>) as the passivation layer can lead to an increased OFF-state breakdown voltage and improved switching speed. The proposed device exhibits enhanced drain current and transconductance values of 1.8&#xa0;A/mm and 0.275&#xa0;S/mm, respectively. Additionally, in the OFF-state, a high breakdown voltage of 525&#xa0;V, ON-state resistance (R<sub>ON</sub>) of 0.11 Ω.mm, intrinsic time-delay of 8.01 picoseconds and high-frequency performance <i>f</i><sub>T</sub>/<i>f</i><sub>max</sub> of 105.01&#xa0;GHz /109.3&#xa0;GHz was achieved with the TiO<sub>2</sub> passivation layer. The study underscores the significance of high breakdown voltage and high frequency characteristics, which are essential for a wide range of DC and RF applications. By elucidating the performance characteristics of different passivation layer materials, this analysis provides valuable insights for the selection of suitable passivation materials in future GaN-based HEMT applications.</p>

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Enhancing Breakdown and Microwave Performance of AlGaN/GaN HEMTs Through Tailored Passivation Layers: Design, Optimization, and Performance Analysis

  • 期刊论文

  • 发表日期：

    2025年5月2日

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  • Nudrat Sufiyan,
  • Ashish Kumar,
  • Aasif Mohammad Bhat,
  • Anup Kumar Sharma

摘要

This paper presents a comprehensive performance analysis of various dielectric material passivation layers on AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) for both DC and RF applications. The results obtained demonstrate that employing different high-k dielectrics (including SiO2, Si3N4, HfO2, La2O3, and TiO2) as the passivation layer can lead to an increased OFF-state breakdown voltage and improved switching speed. The proposed device exhibits enhanced drain current and transconductance values of 1.8 A/mm and 0.275 S/mm, respectively. Additionally, in the OFF-state, a high breakdown voltage of 525 V, ON-state resistance (RON) of 0.11 Ω.mm, intrinsic time-delay of 8.01 picoseconds and high-frequency performance fT/fmax of 105.01 GHz /109.3 GHz was achieved with the TiO2 passivation layer. The study underscores the significance of high breakdown voltage and high frequency characteristics, which are essential for a wide range of DC and RF applications. By elucidating the performance characteristics of different passivation layer materials, this analysis provides valuable insights for the selection of suitable passivation materials in future GaN-based HEMT applications.