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<p>Iron disulfide (FeS<sub>2</sub>) has been synthesized using hydrothermal method. The spin coating method was employed for the deposition of FeS<sub>2</sub> thin film on a glass substrate. Deposited films were characterized for their structural, morphological as well as carrier transport studies. X-ray diffraction and Raman analysis confirmed the formation of pyrite crystal structure, with excess elemental sulfur detected, leading to defect states in the crystal lattice. Field emission scanning electron microscopy (FESEM) results revealed that the deposited film possesses uniform morphology, with a thickness of approximately 40&#xa0;nm, with particle size distribution ~ 10–55&#xa0;nm. Temperature-dependent current-voltage measurements demonstrated a thermally activated conduction mechanism, with the current increasing linearly with temperature and an activation energy of 0.826&#xa0;eV. This behaviour suggests thermal excitation of charge carriers across the bandgap as the primary mechanism for charge transport. The temperature-dependent electrical properties highlight the potential of FeS<sub>2</sub> thin films for applications in gas sensing and photovoltaic devices.</p>

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Structural, Morphological and Charge Transport Properties of FeS2 Nanostructures

  • 期刊论文

  • 发表日期：

    2025年2月11日

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  • Kulwinder Singh,
  • Manjot Kaur,
  • Ram K. Sharma,
  • Neha Sharma,
  • Akshay Kumar

摘要

Iron disulfide (FeS2) has been synthesized using hydrothermal method. The spin coating method was employed for the deposition of FeS2 thin film on a glass substrate. Deposited films were characterized for their structural, morphological as well as carrier transport studies. X-ray diffraction and Raman analysis confirmed the formation of pyrite crystal structure, with excess elemental sulfur detected, leading to defect states in the crystal lattice. Field emission scanning electron microscopy (FESEM) results revealed that the deposited film possesses uniform morphology, with a thickness of approximately 40 nm, with particle size distribution ~ 10–55 nm. Temperature-dependent current-voltage measurements demonstrated a thermally activated conduction mechanism, with the current increasing linearly with temperature and an activation energy of 0.826 eV. This behaviour suggests thermal excitation of charge carriers across the bandgap as the primary mechanism for charge transport. The temperature-dependent electrical properties highlight the potential of FeS2 thin films for applications in gas sensing and photovoltaic devices.