8-Inch Wafer Scale, Transfer-Free, High-Quality Monolayer Graphene Growth on Ti-Buffered Si (001) Substrates At 100 ºC via Plasma-Assisted Chemical Vapor Deposition

Direct and large-area graphene synthesis at low temperature on various substrates is the most popular existing approach for manufacturing functional electronic devices, because it avoids the defects seen in transferred graphene. Here, we present experimental evidence for 8-inch-diameter scale, high-quality monolayer graphene grown directly at 100 ^ºC. Transfer-free and high-quality graphene was synthesized on Ti-buffered Si (001) substrates via plasma-assisted thermal chemical vapor deposition. The Ti-buffer films were deposited using the plasma-damage-free facing-target-sputtering method. We observed defect-free, high-quality graphene growth onto the Ti-buffered 8-inch-wafer. The 8-inch-monolayer graphene with high uniformity had a sheet resistance as low as ~ 80 Ω sq.⁻¹ with 97.4% optical transmittance, making the proposed process suitable for pilot production.