Dual Highly Doped Pocket Based NPN Microstructure Solar Cell: Design and Analysis

This work explores the device operation and performance of a novel dual highly doped pocket (DHDP) NPN microstructure solar cell based on low-cost, heavily doped silicon wafers. This design is particularly well-suited for scenarios where photogenerated electron-hole pair diffusion lengths are shorter than solar radiation penetration depths. The primary objective of this study is to enhance the performance of solar cell structures through the optimization of both technological and geometrical parameters while considering practical considerations. A comprehensive analysis of the DHDP NPN structure was conducted, to evaluate its electrical and optical performance. Additionally, a comparative study between conventional NPN solar cells and DHDP microstructure solar cells has been carried out. It has been observed that the proposed DHDP NPN solar cell achieved power conversion efficiency (PCE) of 17.13%. In pursuit of performance optimization, several key parameters were considered, including the doping concentration of the top n + layer and the sidewall emitter. Furthermore, the study investigated the influence of p + base width and lifetime variations on the solar cell’s performance. The results of this study give important information about the potential of DHDP NPN microstructure solar cells made from cheap, heavily doped silicon wafers. They also pave the way for further improvements in solar cell technology, making it easier for more people to use solar energy and making it more cost-effective.