Temperature dependence analysis of Magnetic Tunnel junction Performance Parameters using Different Halide Nanocomposite Materials

In recent years, magnetic tunnel junction (MTJ) devices have gained popularity, which makes it necessary to analyze various effects on MTJs. Several new and innovative applications of spintronic devices have been introduced with 2D materials. A study has been conducted on an MTJ device that consists of 2 ferromagnetic layers and a composite dielectric. The dielectric layer of the proposed MTJ memory device is composed of Cs₂AgBiCl₆, Cs₂AgBiBr₆, and Cs₂CuBiBr₆. This work presents and compares the composite dielectric layer (CDL) consisting of MgO–Cs₂AgBiCl₆/Cs₂AgBiBr₆/Cs₂CuBiBr₆–MgO. MTJ devices including Fe–CDL–Fe and CoFeB–CDL–CoFeB exhibit greater switching currents and TMR ratios compared to those utilizing Fe–MgO–Fe. This study also examines the temperature-dependent analysis of MTJ. The parallel resistance slightly increases as Temperature increases but antiparallel resistance decreases as temperature increases. The TMR of MTJ decreases as temperature increases and vice versa. The TMR(%) of Fe-MgO-Cs₂AgBiBr₆-based MTJ reduced to 242% at 1000K. The power consumption of Fe–MgO–Cs₂AgBiBr₆–Fe-based MTJ devices is lowest as compared to other halide double perovskites. For all the MTJ models examined Cs₂AgBiBr₆ MTJ models with Fe-based ferromagnetic layer showed the highest TMR ratio. The TMR (%) of Fe–MgO–Cs₂AgBiBr₆ is 1137% and 1839% at room temperature and 13 K respectively.