Dopingless Extended Source TFET for Switching and Analog/RF Applications

A doping-less extended source tunnel FET (DLES-TFET) is proposed for low power switching and analog/RF applications. In the proposed structure, the source metal is extended into the intrinsic Si-channel to form p+-source using charge plasma. An n+-drain is created by inducing electrons from drain metal to intrinsic Si-channel. Further, the gate metal in DLES- TFET is extended towards drain to obtain a field plate structure which improves the performance of proposed device. The performance of the proposed DLES-TFET is investigated using 2D simulations in TCAD tool (ATLAS). Our simulation results reveal that the DLES-TFET achieves high I_ON /I_OFF of 2.86 × 10¹³, low subthreshold swing of 1.5 mV/dec and low threshold voltage of 0.24 V. Additionally, suggested device attains a peak transconductance of 115 µS/µm, cut-off frequency of 33.3 GHz, and offers a gain bandwidth product of 15.2 GHz.