Design and Performance Analysis of Normally -Off Extended Gate (AlGa)₂O₃/Ga₂O₃ High Electron Mobility Transistor

Gallium oxide (Ga₂O₃) based HEMTs have emerged as a optimistic technology for high-power and - frequency usage. Ga₂O₃ is a wide bandgap semiconductor with attractive properties such as a large bandgap, high breakdown voltage, and high electron mobility. Ga₂O₃ -based HEMTs utilize a heterostructure design, where a Ga₂O₃ layer serves as the channel material. The proposed device architecture has been designed and simulated with Silvaco- Atlas. The HEMT employs Ga₂O₃ as a substrate wih Ga₂O₃ buffer layer and Al₂O₃ as dielectric providing insulation to (AlGa)₂O₃ layer and the gate contacts and also improving the breakdown voltage of the device The optimization process involves considering different gate and varying the work function at gate which results in Threshold Voltage, Transconductance, better switching speeds, reduction in parasitics and power consumption and overall efficiency of the device. It is observed that the proposed device results in better a Ion/Ioff ratio of 8.92*10¹⁰ and Threshold Voltage of 2.4 V and Ion value of 0.00012 A/µm. The breakdown Voltage of the device has been found to be 236 V and output power density of 2.92 KW resulting the device to work at high voltage and high-power applications.