Effect of Temperature on RF and Linearity Performance of Inverted-T FinFET

The influence of temperature on the RF/Analog and linearity parameters of Inverted-T FinFET is investigated. The Inverted-T FinFET combines the advantages of bulk CMOS and FinFET technology. The DC performance is presented for the temperature range from 250 to 350 K. The simulation results show that temperature variations significantly affect the intrinsic properties, for instance transconductance ( \(g_{m}\) $g_m$ ) with output conductance ( \(g_{d}\) $g_d$ ) is decreased by 34 and 15% respectively while gate capacitance ( \(C_{gg}\) $C_{\mathit{gg}}$ ) rises by 45.45%. Additionally, properties such as intrinsic delay and intrinsic gain are also investigated with an increase of 44.8 and 34% respectively. Parameters that indicate the amplification capability of the device, such as transconductance generation factor (TGF) decreases by 30%, the cutoff frequency decreases by 32%, the transconductance frequency product (TFP) decreases by 48.6%, the gain frequency product (GFP) decreases by 25.8% and the gain transconductance frequency product (GTFP) decreases by 64.6%, which in turn impact their RF/Analog behavior, are also investigated. The study investigates how the temperature impacts on linearity parameters for instance second order harmonic distortion and third order harmonic distortion ( \(g_{m2}\) $g_{m2}$ and \(g_{m3}\) $g_{m3}$ ) along with second voltage intercept points (VIP 2) and third voltage intercept points (VIP 3) of Inverted-T FinFET.