Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study

In this paper, we have investigated the impact of the un-doped and recessed gate structure on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The performance of the 6 H-SiC MESFET analyzed using TCAD simulations. The proposed un-doped gate structure made of high-k dielectric materials and low-k dielectric materials being hafnium oxide (HfO₂) and silicon dioxide (SiO₂) and it has minimized ionized impurity scattering, leading to increased electron mobility and improved carrier concentration. One of substrate layer of this device grown on Silicon (Si) and β-gallium oxide (β-Ga₂O₃). Performance metrics such as drain current, transconductance, subthreshold slope, and cutoff frequency are evaluated and compared with conventional SiC MESFET structures. The proposed device exhibits superior current driving capabilities, enhanced transconductance, and reduced leakage currents, leading to improved power efficiency. Moreover, the recessed gate structure contributes to a significant reduction in short channel effects, making the device more suitable for low power applications. The simulation parameters are calculated and compared with conventional MESFET structure with the length of source and drain in submicron technology. Therefore the drain current of this proposed device is improved 68%.