TFT Structure Simulation with Various High K Dielectric Materials for Non-volatile Memory Device

In this rapidly growing and changing world of electronics industry it is very critical to have precise model and simulation for device. This paper presents the work on simulating the performance of thin film transistors (TFT) structure with different high K dielectric materials and source drain materials. TFT structure plays an important role in the TFT performance and this paper compares the I_D–V_D and I_D–V_G, threshold voltage (V_T), subthreshold swing and on and off current (Ion/Ioff) of the TFT. Further, for a bottom gate staggered configuration, the effect of different materials as Source and Drain as well as the effect of dielectric strength on the tunneling layer of the TFT is studied to evaluate its suitability for applications like non-volatile memory. The effect of temperature on different performance characteristics of the bottom gate TFT structure like threshold voltage, sub-threshold swing, on–off current ratio are also analysed.