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<p>Lines of indium(III) sulfides are deposited by atomic-layer additive manufacturing (ALAM) based on the reaction of indium tris(acetylacetonate) with hydrogen sulfide established in atomic layer deposition (ALD). At 160&#xa0;°C, solid accretion occurs at a rate of 0.04&#xa0;Å per pass. The layers are continuous, free of observable pinholes, dense, and very smooth, with a root-mean-squares roughness on the order of 0.5&#xa0;nm found for deposits up to 25&#xa0;nm thick. The material is nearly stoichiometric, with a S/. In ratio of 1.6 found experimentally by energy-dispersive X-ray microanalysis in cross-section examination by transmission electron microscopy, and it is polycrystalline. This work delivers In<sub>2</sub>S<sub>3</sub> as a dopant or interfacial layer in opto-electronic devices to be prototyped and optimized by ALAM.</p>

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Atomic-layer Additive Manufacturing of Indium(III) Sulfide

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月2日

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  • Yaraset A. Galván Dominguez,
  • Syrine Khaled,
  • Tadahiro Yokosawa,
  • Johannes Will,
  • Sonja Kürten,
  • Micah Mc Naire,
  • Erdmann Spiecker,
  • Latifa Bergaoui,
  • Julien Bachmann

摘要

Lines of indium(III) sulfides are deposited by atomic-layer additive manufacturing (ALAM) based on the reaction of indium tris(acetylacetonate) with hydrogen sulfide established in atomic layer deposition (ALD). At 160 °C, solid accretion occurs at a rate of 0.04 Å per pass. The layers are continuous, free of observable pinholes, dense, and very smooth, with a root-mean-squares roughness on the order of 0.5 nm found for deposits up to 25 nm thick. The material is nearly stoichiometric, with a S/. In ratio of 1.6 found experimentally by energy-dispersive X-ray microanalysis in cross-section examination by transmission electron microscopy, and it is polycrystalline. This work delivers In2S3 as a dopant or interfacial layer in opto-electronic devices to be prototyped and optimized by ALAM.