<p>The search for stable, cost-effective, and environmentally friendly materials has sparked increasing interest in lead-free perovskites. In this work, we investigate the potential of the lead-free perovskite, formamidinium bismuth bromide (FA₃Bi₂Br₉) NCs, as the stable active layer material in memristor devices, focusing on their structural, electrical, and resistive switching (RS) properties. X-ray diffraction and Raman spectroscopy confirmed phase purity and stable vibrational characteristics of the material over a period of four weeks. Electrical characterization through current-voltage (I–V) measurements revealed typical bipolar resistive switching, with a low SET voltage of approximately 0.26&#xa0;V and consistent switching performance throughout the study period. Analysis of the switching mechanism indicated trap-controlled space charge-limited conduction (SCLC) in the high resistance state (HRS) and Ohmic conduction in the low resistance state (LRS). The LRS current and SET voltage corresponded to a steady power consumption of roughly 0.51 mW, demonstrating the low-power operation of these devices. Retention testing confirmed non-volatile behavior, with an HRS/LRS ratio of 10⁵ maintained for over 6000&#xa0;min at a read voltage of 0.5&#xa0;V. The observed correlation between impedance response and memristor performance highlights the structural and electrical stability of FA₃Bi₂Br₉₋based devices, supporting their suitability for reliable, low-power memory applications.</p>