Scholarlink

<p>Eco-friendly solutions using natural, biocompatible, biodegradable materials with low-cost fabrication techniques, such as solution processes, have been utilised in organic field-effect transistors (OFETs). This paper evaluated the integration of mango and cactus saps as natural high-<i>k</i> dielectric materials in OFETs. It was observed that the thinner (170&#xa0;nm) mango sap dielectric layers showed a 30% higher areal capacitance (C<sub>i</sub>) value (42.56 ± 5.29 nF/cm<sup>2</sup> at 1&#xa0;kHz). The dielectric constant (<i>k</i>) values of thinner mango sap and cactus sap: PMMA bilayer were calculated as <i>k</i> ~ 8 and <i>k</i> ~ 16, respectively. Leakage current densities were &lt; 10<sup>–7</sup> A/cm<sup>2</sup> at 3&#xa0;V for single layers of mango sap. Cactus sap was used as a dielectric layer with an ultrathin (30&#xa0;nm) PMMA passivating layer. The cactus bilayer yielded 93.53 ± 8.23 nF/cm<sup>2</sup> average areal capacitance at 1&#xa0;kHz with ~ 10<sup>–8</sup> A/cm<sup>2</sup> leakage current density. DPP-DTT: PMMA blend OFET devices using cactus sap: PMMA dielectric layer exhibited one of the highest reported (1 ± 0.2 cm<sup>2</sup>V<sup>− 1</sup> s<sup>− 1</sup>) field-effect mobility and lowest subthreshold swing (105 ± 7 mV/dec), threshold voltage (–0.2&#xa0;V) and interfacial trap density (1.86 × 10<sup>12</sup> cm<sup>–2</sup>eV<sup>–1</sup>) at − 3&#xa0;V for natural dielectrics. Transistors with a thicker single-layer mango sap dielectric showed superior figures-of-merit compared to those using a thinner mango sap dielectric layer, including higher mobility and I<sub>on/off</sub> current and smaller SS. Such natural, biodegradable plant saps are promising future dielectric materials for the sustainable fabrication of low-voltage electronic devices.</p> Graphical abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Mango and cactus saps as natural, biodegradable dielectric materials for sustainable production of low-voltage OFETs

  • 期刊论文

  • 发表日期：

    2026年3月13日

查看全文
  • Aybuke Tavasli,
  • Mané Seck,
  • Abdoulaye Tall,
  • Abdou Karim Diallo,
  • Leszek A. Majewski,
  • Levent Trabzon,
  • Berta Gómez-Lor,
  • Sheida Faraji

摘要

Eco-friendly solutions using natural, biocompatible, biodegradable materials with low-cost fabrication techniques, such as solution processes, have been utilised in organic field-effect transistors (OFETs). This paper evaluated the integration of mango and cactus saps as natural high-k dielectric materials in OFETs. It was observed that the thinner (170 nm) mango sap dielectric layers showed a 30% higher areal capacitance (Ci) value (42.56 ± 5.29 nF/cm2 at 1 kHz). The dielectric constant (k) values of thinner mango sap and cactus sap: PMMA bilayer were calculated as k ~ 8 and k ~ 16, respectively. Leakage current densities were < 10–7 A/cm2 at 3 V for single layers of mango sap. Cactus sap was used as a dielectric layer with an ultrathin (30 nm) PMMA passivating layer. The cactus bilayer yielded 93.53 ± 8.23 nF/cm2 average areal capacitance at 1 kHz with ~ 10–8 A/cm2 leakage current density. DPP-DTT: PMMA blend OFET devices using cactus sap: PMMA dielectric layer exhibited one of the highest reported (1 ± 0.2 cm2V− 1 s− 1) field-effect mobility and lowest subthreshold swing (105 ± 7 mV/dec), threshold voltage (–0.2 V) and interfacial trap density (1.86 × 1012 cm–2eV–1) at − 3 V for natural dielectrics. Transistors with a thicker single-layer mango sap dielectric showed superior figures-of-merit compared to those using a thinner mango sap dielectric layer, including higher mobility and Ion/off current and smaller SS. Such natural, biodegradable plant saps are promising future dielectric materials for the sustainable fabrication of low-voltage electronic devices.

Graphical abstract