Scholarlink

<p>The performance of silicon (Si) solar cells is significantly influenced by the texturization process applied to the Si wafers utilized in their production. This research employed aqueous sodium silicate (Na<sub>2</sub>SiO<sub>3</sub>) and potassium silicate (K<sub>2</sub>SiO<sub>3</sub>) solutions as etching agents for the two-step texturization of p-type Si wafers. The main objective was to determine the influence of the etchant by measuring the surface morphology and reflectance of the Si surface. The optimal 5 wt% concentration for both additives in the etchant solution was most effective for texturing, resulting in the lowest surface reflectance and a more uniform pyramidal structure on the silicon surface after two-step texturization. The two-step texturization of p-type Si wafers using 5 wt% of K₂SiO₃ and Na₂SiO₃ resulted in surface roughness values of 167.96&#xa0;nm and 279.22&#xa0;nm, with corresponding reflectance values of 12.17% and 9.57%, respectively. Results showed that 5 wt% Na<sub>2</sub>SiO<sub>3</sub>, give the lowest surface reflectance and more uniformity of pyramidal structure on Si surface, with the average height of pyramids formed were 669.9&#xa0;nm–1.3&#xa0;μm. In summary, the 5 wt% Na<sub>2</sub>SiO<sub>3</sub> solutions with two-step texturization are an effective way to obtain the desired surface texturization for higher performance of solar cell applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhancing the size of textured pyramids on p-type silicon wafers through a two-step texturization process utilizing silicate additives

  • 期刊论文

  • 发表日期：

    2025年8月13日

查看全文
  • Mohd Norizam Md Daud,
  • Amin Aadenan,
  • Mohd Adib Ibrahim,
  • Najah Syahirah Mohd Nor,
  • Mohd Asri Mat Teridi

摘要

The performance of silicon (Si) solar cells is significantly influenced by the texturization process applied to the Si wafers utilized in their production. This research employed aqueous sodium silicate (Na2SiO3) and potassium silicate (K2SiO3) solutions as etching agents for the two-step texturization of p-type Si wafers. The main objective was to determine the influence of the etchant by measuring the surface morphology and reflectance of the Si surface. The optimal 5 wt% concentration for both additives in the etchant solution was most effective for texturing, resulting in the lowest surface reflectance and a more uniform pyramidal structure on the silicon surface after two-step texturization. The two-step texturization of p-type Si wafers using 5 wt% of K₂SiO₃ and Na₂SiO₃ resulted in surface roughness values of 167.96 nm and 279.22 nm, with corresponding reflectance values of 12.17% and 9.57%, respectively. Results showed that 5 wt% Na2SiO3, give the lowest surface reflectance and more uniformity of pyramidal structure on Si surface, with the average height of pyramids formed were 669.9 nm–1.3 μm. In summary, the 5 wt% Na2SiO3 solutions with two-step texturization are an effective way to obtain the desired surface texturization for higher performance of solar cell applications.