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<p>Metal sulfides have received significant attention due to their optical and electrical properties. They have been used as efficient optical radiation detectors. In this paper, a novel technique was proposed to synthesize a bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) nanostructure via laser ablation of a bismuth pellet in a sodium sulfide (Na<sub>2</sub>S) solution. The structural, morphological, chemical, optical, and electrical characteristics of Bi<sub>2</sub>S<sub>3</sub> films were studied as a function of laser fluence. X-ray diffraction (XRD) analysis confirms the formation of crystalline orthorhombic Bi<sub>2</sub>S<sub>3</sub> with highly oriented grains along the (012) plane. The optical properties reveal that the optical energy gap of the Bi<sub>2</sub>S<sub>3</sub> nanostructure decreases from 1.9 to 1.58&#xa0;eV. Raman spectra of Bi<sub>2</sub>S<sub>3</sub> films show the existence of three vibration modes located at 295, 510, and 652&#xa0;cm<sup>−1</sup>. FE-SEM studies reveal that the surface morphology of the Bi<sub>2</sub>S<sub>3</sub> nanostructures is a mixture of nanorods and nanoparticles. The current–voltage properties of the heterojunctions under both dark and light conditions were studied. The Bi<sub>2</sub>S<sub>3</sub>/p-Si photodetector fabricated at 12.74&#xa0;J/cm²/pulse achieved a maximum responsivity of 1.2&#xa0;A/W, an external quantum efficiency of 3.96 × 10² %, and specific detectivity of 1.1 × 10¹³ Jones at 375&#xa0;nm. The maximum ON/OFF current was recorded for the photodetector fabricated at 12.74&#xa0;J/cm²/pulse. The rise/fall time of the photodetector was determined as a function of laser fluence. Energy band diagram of the Bi<sub>2</sub>S<sub>3</sub>/p-Si photodetector was constructed.</p>

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High-performance broadband Bi₂S₃/Si hybrid photodetectors: design, fabrication, and characterization

  • 期刊论文

  • 发表日期：

    2025年5月21日

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  • Ahmed M. Ahmed,
  • Asmiet Ramizy,
  • Raid A. Ismail

摘要

Metal sulfides have received significant attention due to their optical and electrical properties. They have been used as efficient optical radiation detectors. In this paper, a novel technique was proposed to synthesize a bismuth sulfide (Bi2S3) nanostructure via laser ablation of a bismuth pellet in a sodium sulfide (Na2S) solution. The structural, morphological, chemical, optical, and electrical characteristics of Bi2S3 films were studied as a function of laser fluence. X-ray diffraction (XRD) analysis confirms the formation of crystalline orthorhombic Bi2S3 with highly oriented grains along the (012) plane. The optical properties reveal that the optical energy gap of the Bi2S3 nanostructure decreases from 1.9 to 1.58 eV. Raman spectra of Bi2S3 films show the existence of three vibration modes located at 295, 510, and 652 cm−1. FE-SEM studies reveal that the surface morphology of the Bi2S3 nanostructures is a mixture of nanorods and nanoparticles. The current–voltage properties of the heterojunctions under both dark and light conditions were studied. The Bi2S3/p-Si photodetector fabricated at 12.74 J/cm²/pulse achieved a maximum responsivity of 1.2 A/W, an external quantum efficiency of 3.96 × 10² %, and specific detectivity of 1.1 × 10¹³ Jones at 375 nm. The maximum ON/OFF current was recorded for the photodetector fabricated at 12.74 J/cm²/pulse. The rise/fall time of the photodetector was determined as a function of laser fluence. Energy band diagram of the Bi2S3/p-Si photodetector was constructed.