Scholarlink

<p>This paper investigates the development and characterization of high-voltage PN diodes using nitrogen-doped silicon carbide (N-SiC) deposited on carbon nanotube paper (BP) and graphene paper (GP), respectively. The process involves fabricating flexible semiconductor substrates made of carbon materials, specifically BP composed of multi-walled carbon nanotubes (MWCNTs) and GP produced from multilayer graphene powder. Material properties were analyzed using Raman spectroscopy, Hall measurements, scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). Electrical characteristics revealed that the diode fabricated with 20&#xa0;min of N-SiC sputtering on BP exhibited a reverse breakdown voltage of -476 volts, surpassing that of the diode based on GP, which showed a reverse breakdown voltage of -88 volts. Moreover, this study underscores the significance of N-SiC deposition in modulating the properties of carbon-based materials and provides insights into the high-temperature thermoelectric and photoelectric effects of high-voltage carbon material diodes.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Developing high-voltage flexible diodes by nitrogen-doped sputtering of silicon carbide onto buckypaper and grapheme paper, and investigating its thermoelectric and photoelectric voltage effects

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年1月20日

查看全文
  • Chia-Yi Lin,
  • Jih-Hsin Liu

摘要

This paper investigates the development and characterization of high-voltage PN diodes using nitrogen-doped silicon carbide (N-SiC) deposited on carbon nanotube paper (BP) and graphene paper (GP), respectively. The process involves fabricating flexible semiconductor substrates made of carbon materials, specifically BP composed of multi-walled carbon nanotubes (MWCNTs) and GP produced from multilayer graphene powder. Material properties were analyzed using Raman spectroscopy, Hall measurements, scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). Electrical characteristics revealed that the diode fabricated with 20 min of N-SiC sputtering on BP exhibited a reverse breakdown voltage of -476 volts, surpassing that of the diode based on GP, which showed a reverse breakdown voltage of -88 volts. Moreover, this study underscores the significance of N-SiC deposition in modulating the properties of carbon-based materials and provides insights into the high-temperature thermoelectric and photoelectric effects of high-voltage carbon material diodes.