AgBiS₂/g-C₃N₄ hybrid composites: synthesis, characterization and counter electrode performance in photovoltaic device

The most promising material is silver bismuth sulfide, which is widely utilized in photodetectors, thermoelectric, solar cells, and other devices. The graphitic carbon nitride (g-C₃N₄) layered structure is a non-metallic semiconductor with exceptional thermal and chemical stability. In this work, AgBiS₂ was produced utilizing one step solvothermal approach, g-C₃N₄ was produced by thermal decomposition by 500 °C, and AgBiS₂/g-C₃N₄ composites was carried out via sonication. The quick electron transport can be enhanced by including g-C₃N₄ with AgBiS₂. The XRD study proved that structural formation of bulk g-C₃N₄, AgBiS₂ and composites. SEM shows the agglomerated flakes formed on the surface of the g-C₃N₄’s interlayer structure. The composites samples ABS-gCN 2 bandgap value revealed a red shift with the pure ABS. The stretching modes of C-N heterocycles and the strong interaction between the two materials were confirmed by functional groups. Low peak-to-peak separation and high cathodic current density is found to be g-C₃N₄ effects on AgBiS₂. The catalytic activity and the photo-conversion efficiency were studied for the AgBiS₂/g-C₃N₄ based counter electrodes in DSSC.