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<p>This study presents a coupled electro-thermal analysis of Dual Metal Gate (DMG) versus Single Metal Gate (SMG) AlGaN/GaN HEMTs through Silvaco Atlas simulations. Using calibrated 2-µm gate-length DMG structures subjected to temperatures from 300–600 K, we reveal new insights into self-heating management, an underexplored frontier in existing literature. Results demonstrate DMG’s superior performance: 10% higher drain current and transconductance, accompanied by a 24 K reduction in peak operating temperature (502 K vs. SMG’s 526 K) and lower power dissipation. The DMG device further achieves a 25.8 GHz cut-off frequency due to enhanced carrier control under thermal stress. These advantages establish DMG technology as a robust solution for high-frequency applications demanding stringent thermal stability.</p>

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Numerical analysis of electro-thermal performance in dual metal gate AlGaN/GaN HEMTs

  • 期刊论文

  • 发表日期：

    2025年10月5日

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  • Haykel Mzoughi,
  • Faouzi Nasri,
  • Khalifa Ahmed Salama,
  • Mohamed Atri,
  • Amenallah Guizani

摘要

This study presents a coupled electro-thermal analysis of Dual Metal Gate (DMG) versus Single Metal Gate (SMG) AlGaN/GaN HEMTs through Silvaco Atlas simulations. Using calibrated 2-µm gate-length DMG structures subjected to temperatures from 300–600 K, we reveal new insights into self-heating management, an underexplored frontier in existing literature. Results demonstrate DMG’s superior performance: 10% higher drain current and transconductance, accompanied by a 24 K reduction in peak operating temperature (502 K vs. SMG’s 526 K) and lower power dissipation. The DMG device further achieves a 25.8 GHz cut-off frequency due to enhanced carrier control under thermal stress. These advantages establish DMG technology as a robust solution for high-frequency applications demanding stringent thermal stability.