Scholarlink

<p>This research presents a novel approach for enhancing the performance of environmentally friendly Cs<sub>2</sub>BiCuI<sub>6</sub>-based double perovskite solar cells (d-PSCs) through interface engineering, employing terbium-doped fluorine-doped tin oxide (Tb-FTO) as a transparent front electrode and graphene oxide (GO) as a hole transport layer. Using SCAPS-1D simulations, we systematically analyze the effect of Tb doping on FTO’s optoelectronic properties, revealing improved charge carrier mobility, band alignment, and light transmission. These improvements translate into superior photovoltaic metrics: a Voc of 0.96&#xa0;V, Jsc of 36.45&#xa0;mA/cm², FF of 79.06%, and a PCE of 27.67%, which is higher than the efficiency in the undoped FTO device. Additionally, we explore the influence of active layer thickness, defect and doping densities, temperature, and parasitic resistances (Rs and Rsh), identifying optimal conditions for device stability and performance. The novelty of this study lies in the strategic integration of rare-earth element doping in TCO and GO interface engineering, offering a new route toward high-efficiency, lead-free, and sustainable perovskite photovoltaics. Furthermore, machine learning algorithms were employed alongside SCAPS-1D outputs to model complex parameter–performance relationships, enabling predictive optimization and providing deeper insight into device behavior beyond the simulated parameter space.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhanced optoelectronic behavior of eco-friendly Cs2BiCuI6 double perovskite solar cells via terbium-doped FTO and graphene oxide interface engineering

  • 期刊论文

  • 发表日期：

    2025年9月25日

查看全文
  • Mohsin Khan,
  • Ghazi Aman Nowsherwan,
  • Umar Farooq Ali,
  • Bushra Mazhar,
  • Saira Riaz,
  • Shahzad Naseem

摘要

This research presents a novel approach for enhancing the performance of environmentally friendly Cs2BiCuI6-based double perovskite solar cells (d-PSCs) through interface engineering, employing terbium-doped fluorine-doped tin oxide (Tb-FTO) as a transparent front electrode and graphene oxide (GO) as a hole transport layer. Using SCAPS-1D simulations, we systematically analyze the effect of Tb doping on FTO’s optoelectronic properties, revealing improved charge carrier mobility, band alignment, and light transmission. These improvements translate into superior photovoltaic metrics: a Voc of 0.96 V, Jsc of 36.45 mA/cm², FF of 79.06%, and a PCE of 27.67%, which is higher than the efficiency in the undoped FTO device. Additionally, we explore the influence of active layer thickness, defect and doping densities, temperature, and parasitic resistances (Rs and Rsh), identifying optimal conditions for device stability and performance. The novelty of this study lies in the strategic integration of rare-earth element doping in TCO and GO interface engineering, offering a new route toward high-efficiency, lead-free, and sustainable perovskite photovoltaics. Furthermore, machine learning algorithms were employed alongside SCAPS-1D outputs to model complex parameter–performance relationships, enabling predictive optimization and providing deeper insight into device behavior beyond the simulated parameter space.