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<p>This study investigates a novel perovskite solar cell (PSC) architecture employing CsSn₀.₅Ge₀.₅I₃ as the active absorber layer, aiming to develop a high-efficiency, lead-free photovoltaic technology. The simulated device configuration FTO/TiO₂/CsSn₀.₅Ge₀.₅I₃/Spiro-OMeTAD/Au is modeled using SCAPS-1D and achieves an impressive power conversion efficiency (PCE) of 23.08%, along with an open-circuit voltage (V_OC) of 1.1253&#xa0;V, short-circuit current density (J_SC) of 26.87&#xa0;mA/cm<sup>2</sup>, and a fill factor (FF) of 76.32%. The incorporation of CsSn₀.₅Ge₀.₅I₃ not only addresses the common issue of tin oxidation but also offers several key advantages, including an optimal bandgap (~ 1.5&#xa0;eV), low exciton binding energy, and improved intrinsic charge transport properties. Furthermore, the study explores alternative hole transport layers (HTLs) beyond Spiro-OMeTAD, evaluating their stability and cost-effectiveness to enhance both performance and long-term operational viability. The findings position CsSn₀.₅Ge₀.₅I₃ as a promising next-generation absorber material for high-efficiency, eco-friendly PSCs, representing a significant step toward the realization of sustainable and economically viable lead-free solar energy technologies.</p>

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A comprehensive study on ETL and HTL layer optimization for the design and simulation of high-efficiency, stable lead-free CsSn₀.₅Ge₀.₅I₃ perovskite solar cells

  • 期刊论文

  • 发表日期：

    2025年6月9日

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  • Priyanka Gupta,
  • Sudakar Singh Chauhan,
  • Kaushal Kumar Nigam,
  • Dharmendra Kumar,
  • Ruchi Devlal

摘要

This study investigates a novel perovskite solar cell (PSC) architecture employing CsSn₀.₅Ge₀.₅I₃ as the active absorber layer, aiming to develop a high-efficiency, lead-free photovoltaic technology. The simulated device configuration FTO/TiO₂/CsSn₀.₅Ge₀.₅I₃/Spiro-OMeTAD/Au is modeled using SCAPS-1D and achieves an impressive power conversion efficiency (PCE) of 23.08%, along with an open-circuit voltage (V_OC) of 1.1253 V, short-circuit current density (J_SC) of 26.87 mA/cm2, and a fill factor (FF) of 76.32%. The incorporation of CsSn₀.₅Ge₀.₅I₃ not only addresses the common issue of tin oxidation but also offers several key advantages, including an optimal bandgap (~ 1.5 eV), low exciton binding energy, and improved intrinsic charge transport properties. Furthermore, the study explores alternative hole transport layers (HTLs) beyond Spiro-OMeTAD, evaluating their stability and cost-effectiveness to enhance both performance and long-term operational viability. The findings position CsSn₀.₅Ge₀.₅I₃ as a promising next-generation absorber material for high-efficiency, eco-friendly PSCs, representing a significant step toward the realization of sustainable and economically viable lead-free solar energy technologies.