Bulk substrate based reconfigurable field-effect transistor and its single event effect performance

Reconfigurable field-effect transistors (RFETs) documented in the literature use Silicon on insulator (SOI) substrate only. This work proposes bulk substrate based Reconfigurable field-effect transistor (bulk RFET) devices. The objective is to realize a RFET device in the bulk substrate and it is demonstrated through selective oxide technique. The performance of the proposed device has been investigated for its I_D-V_G characteristics through drive current (I_ON), leakage current (I_OFF) and I_ON/I_OFF switching ratio as well as analog/RF performance parameter through unity gain frequency (f_T). Further, bulk RFET-based a basic inverter circuit has been realized and studied for its transient response. Furthermore, the impact of single event transient (SET) on the proposed device has been analyzed for its reliability through the parameters, collected charge (Qc) and the peak value of SET induced current. The results are compared with SOI based RFET device. TCAD simulator is used for all the simulations.