Design and analysis of a novel resistorless frequency selective network for low voltage operation

The paper presents a novel resistorless realization of a voltage mode frequency selective network. The realization features an extra-X second generation current conveyor as the active element, a grounded capacitor and two NMOS transistors. The NMOS transistors are externally connected and operated in triode region which makes them act like active resistors. The uniqueness of the circuit lies in the simultaneous availability of the following characteristics: low output impedance, grounded capacitor, resistorless realization, single active building block (ABB), and high input impedance. Other noteworthy characteristics of the proposed frequency selective network are low power dissipation, low voltage operation, and low active and passive sensitivities. The non-ideal analysis of the proposed network supports its theoretical behavior. The proposed circuit’s performance is validated through PSPICE simulations using 0.18 µm technology and supply voltage is set within ± 1 V. Using AD844 ICs, the proposed circuit's viability is also experimentally checked.