Design and simulation of power efficient carbon nanotube field effect transistor based active notch filters for nano electronic applications

In this work, the three different designs of carbon nanotube field effect transistor (CNTFET) based notch filters are proposed and are compared with the existing well-known complementary metal oxide semiconductor (CMOS) notch filter. The design of these notch filters uses 45 nm technology node and are simulated using HSPICE. The proposed notch filters are NCNT-PMOS notch filter, PCNT-NMOS notch filter and Pure CNT notch filter. The NCNT-PMOS notch filter consists of N-type CNTFETs and conventional P-type MOSFETs, whereas, PCNT-NMOS notch filter consists of P-type CNTFETs and conventional N-type MOSFETs. The third proposed Pure CNT notch filter uses both N-type CNTFETs and P- type CNTFETs. The simulation results of the Quality factors of Complementary field effect transistor (CMOS) notch filter, NCNT-PMOS notch filter, PCNT-NMOS notch filter and Pure CNT notch filter is 2.2, 3.38, 2.43 and 10.29, respectively. Furthermore, the experimental results show that average power consumption for CMOS notch filter, NCNT-PMOS notch filter, PCNT-NMOS notch filter and Pure CNT notch filter is 128 µW, 100 µW, 114 µW and 90 µW, respectively. The experimental results verify that the quality factors and the average power consumption of the proposed notch filters are better than the conventional CMOS notch filter. Moreover, among the three proposed notch filters the pure CNT notch filter shows good performance results of quality factors and the average power consumption than others, thus it can be used in the real life applications.