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<p>Thermoelectric (TE) materials are novel energy materials that can convert thermal energy into electrical energy and vice versa. However, TE materials still exhibit relatively low TE properties. Thus, this study proposes the modulation of carrier transport properties and TE properties of Bi<sub>2</sub>Te<sub>3</sub> films by altering substrate conditions to enhance the TE properties. Bi<sub>2</sub>Te<sub>3</sub> films were prepared with different conditions by altering the substrate type and temperature. Higher substrate temperatures lead to an increase in the V<sub>Te</sub> defect concentration and carrier concentration in the films. The single-crystal (00&#xa0;L) orientation for Al<sub>2</sub>O<sub>3</sub> substrate induces Bi<sub>2</sub>Te<sub>3</sub> films to grow along the (00&#xa0;L) direction. However, the (015) orientation of Bi<sub>2</sub>Te<sub>3</sub> is the preferred growth direction during the preparation process. Thus, the Al<sub>2</sub>O<sub>3</sub> substrate leads to the formation of a high concentration of V<sub>Te</sub> defects in the Bi<sub>2</sub>Te<sub>3</sub> film, which results in a decrease in the Seebeck coefficient. Substrate conditions must be carefully controlled by adjusting the substrate type to optimize the V<sub>Te</sub> concentration during the preparation process. The 300-SiO₂ films prepared in this study exhibit low electrical resistivity and high-power factor, reaching maximum value of 3326.29 µW·m⁻¹·K⁻² at 553&#xa0;K. Therefore, altering the substrate conditions can enhance the TE properties of Bi<sub>2</sub>Te<sub>3</sub> films.</p>

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Effect of VTe defect concentration on carrier transport and thermoelectric properties of Bi₂Te₃ films

  • 期刊论文

  • 发表日期：

    2026年5月28日

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  • Haibo Liu,
  • Junyan Yang,
  • Fan Wang,
  • Yilong Sun,
  • Shanqiang Du

摘要

Thermoelectric (TE) materials are novel energy materials that can convert thermal energy into electrical energy and vice versa. However, TE materials still exhibit relatively low TE properties. Thus, this study proposes the modulation of carrier transport properties and TE properties of Bi2Te3 films by altering substrate conditions to enhance the TE properties. Bi2Te3 films were prepared with different conditions by altering the substrate type and temperature. Higher substrate temperatures lead to an increase in the VTe defect concentration and carrier concentration in the films. The single-crystal (00 L) orientation for Al2O3 substrate induces Bi2Te3 films to grow along the (00 L) direction. However, the (015) orientation of Bi2Te3 is the preferred growth direction during the preparation process. Thus, the Al2O3 substrate leads to the formation of a high concentration of VTe defects in the Bi2Te3 film, which results in a decrease in the Seebeck coefficient. Substrate conditions must be carefully controlled by adjusting the substrate type to optimize the VTe concentration during the preparation process. The 300-SiO₂ films prepared in this study exhibit low electrical resistivity and high-power factor, reaching maximum value of 3326.29 µW·m⁻¹·K⁻² at 553 K. Therefore, altering the substrate conditions can enhance the TE properties of Bi2Te3 films.