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<p>Si<sub>3</sub>N<sub>4</sub>-SiC composite ceramics with Y<sub>2</sub>O<sub>3</sub>-MgO-Al<sub>2</sub>O<sub>3</sub> as multi-component sintering additives were prepared by hot pressing sintering. The effect of sintering temperature on the properties of Si<sub>3</sub>N<sub>4</sub>-SiC composites was studied. With the increase of hot pressing sintering temperature, the microstructure of the Si<sub>3</sub>N<sub>4</sub>-SiC composites was improved. However, with the further increase of hot pressing sintering temperature, the porosity of Si<sub>3</sub>N<sub>4</sub>-SiC composites increased. When the sintering temperature is 1720&#xa0;°C, the comprehensive properties of Si<sub>3</sub>N<sub>4</sub>-SiC composite ceramics were better. The density and thermal conductivity of obtained Si<sub>3</sub>N<sub>4</sub>-SiC composite ceramics at room temperature was 3.232&#xa0;g/cm<sup>3</sup> and 62.107&#xa0;W/(m•K) respectively. The dielectric constant of Si<sub>3</sub>N<sub>4</sub>-SiC composites for 1720&#xa0;°C sintering temperature reached a minimum range of 14–19 and the dielectric loss was the range of 0.5–0.7 in W band (75–110&#xa0;GHz). Meanwhile, the microwave absorbing performance of Si<sub>3</sub>N<sub>4</sub>-SiC composite ceramics attenuator at Y band (170–260&#xa0;GHz) were investigated by measuring S parameters. Si<sub>3</sub>N<sub>4</sub>-SiC composite ceramics attenuator sintered at 1720&#xa0;°C showed good microwave absorbing performance at Y band, with S11&lt;-20 dB and S21&lt;-75 dB.</p>

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Effect of hot pressing sintering temperature on microstructure and properties of Si3N4-SiC composite ceramics

  • 期刊论文

  • 发表日期：

    2025年11月19日

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  • Xiangrong Zang,
  • Zhiqiang Yu,
  • Haiqing Li,
  • Huihui Tan,
  • Yanping Lu,
  • Ming Yan,
  • Zihan Peng

摘要

Si3N4-SiC composite ceramics with Y2O3-MgO-Al2O3 as multi-component sintering additives were prepared by hot pressing sintering. The effect of sintering temperature on the properties of Si3N4-SiC composites was studied. With the increase of hot pressing sintering temperature, the microstructure of the Si3N4-SiC composites was improved. However, with the further increase of hot pressing sintering temperature, the porosity of Si3N4-SiC composites increased. When the sintering temperature is 1720 °C, the comprehensive properties of Si3N4-SiC composite ceramics were better. The density and thermal conductivity of obtained Si3N4-SiC composite ceramics at room temperature was 3.232 g/cm3 and 62.107 W/(m•K) respectively. The dielectric constant of Si3N4-SiC composites for 1720 °C sintering temperature reached a minimum range of 14–19 and the dielectric loss was the range of 0.5–0.7 in W band (75–110 GHz). Meanwhile, the microwave absorbing performance of Si3N4-SiC composite ceramics attenuator at Y band (170–260 GHz) were investigated by measuring S parameters. Si3N4-SiC composite ceramics attenuator sintered at 1720 °C showed good microwave absorbing performance at Y band, with S11<-20 dB and S21<-75 dB.