<p>This research paper presents a comprehensive experimental investigation into the stress values of widely used thin films in micro-electro-mechanical systems (MEMS) devices. The study aims to provide valuable insights into the mechanical behaviour of these thin films, which is crucial for optimising the design and reliability of MEMS devices. The thin films under scrutiny include silicon oxide, silicon nitride, polysilicon thin films and composite stacks. A series of experiments was conducted to measure and analyse the inherent stresses present in these thin films. The experimental setup employed a state-of-the-art laser-based non-contact non-destructive technique to ensure precise and accurate stress measurements. Our findings reveal a nuanced understanding of the stress values exhibited by thin films under different growth conditions and fabrication processes. The impact of factors such as deposition techniques and film thickness on stress characteristics is also examined. The results provide crucial data for MEMS engineers and researchers striving to enhance the performance and reliability of microscale devices. Furthermore, this research contributes to the ongoing effort to establish a comprehensive database of thin-film stress values, aiding in the development of robust computational models for MEMS design. The implications of our findings extend to the optimization of fabrication processes, ultimately advancing the field of MEMS technology by addressing challenges related to mechanical reliability and structural integrity.</p>