Purpose: Silicon strip detectors are commonly used today. To ensure that simulations accurately reflect the detector’s real-world response, precise digitization of the silicon detector is essential in Monte Carlo simulation. After electron/hole creation due to energy deposition, the distribution and collection of charge carriers within the silicon detector are governed by several parameters. These parameters cannot be directly measured experimentally but can instead be determined through careful setup and calibration by comparing simulation results with experimental data. Methods: An analytical model was used to digitize the silicon strip detectors. The distribution of the reconstructed impact position and amplitude varies depending on the impact position and is sensitive to parameters such as the diffusion coefficients and capacitance coupling coefficients. These parameters are tuned by comparing the distributions obtained from simulated data with those from beam test data. Results and conclusion: The diffusion coefficients and capacitance coupling coefficients, associated with readout strips and non-readout strips, can be determined by analyzing the distributions of <InlineEquation ID="IEq1"> <EquationSource Format="TEX">${\eta }$</EquationSource> <EquationSource Format="MATHML"><math> <mi>η</mi> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq2"> <EquationSource Format="TEX">${\eta _{2}}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>η</mi> <mn>2</mn> </msub> </math></EquationSource> </InlineEquation> (defined as the center-of-gravity of a cluster of adjacent readout strips and the ratio of the two highest adjacent strip signals, respectively. Their formal definitions are provided in Equations <InternalRef RefID="Equ2">2</InternalRef> and <InternalRef RefID="Equ3">3</InternalRef>), as well as the relationship between the total ADC and <InlineEquation ID="IEq3"> <EquationSource Format="TEX">${\eta }$</EquationSource> <EquationSource Format="MATHML"><math> <mi>η</mi> </math></EquationSource> </InlineEquation>, through comparisons of simulated data and beam test data. After optimizing these parameters, the simulated data show good agreement with the beam test data.

A complete realization of silicon strip detector simulation and digitization for particle experiment

期刊论文
发表日期：

2025年12月24日

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Yan-jin Zheng,
Hu Liu,
Zhi-Cheng Tang,
Zhao-Yi Qu,
Zi-Xuan Yan,
Feng-Rong Zhu,
Zu-Hao Li,
Rui Qiao,
Ke Gong,
Wen-Xi Peng,
Jia-Ju Wei,
Bing Lu,
Dong-Ya Guo,
Ya-Qing Liu,
Xuan Liu,
Ming Xu,
Zhi-Gang Wang,
Rui-Jie Wang,
Tian-Wei Bao,
Yong-Wei Dong

摘要

Purpose:

Silicon strip detectors are commonly used today. To ensure that simulations accurately reflect the detector’s real-world response, precise digitization of the silicon detector is essential in Monte Carlo simulation. After electron/hole creation due to energy deposition, the distribution and collection of charge carriers within the silicon detector are governed by several parameters. These parameters cannot be directly measured experimentally but can instead be determined through careful setup and calibration by comparing simulation results with experimental data.

Methods:

An analytical model was used to digitize the silicon strip detectors. The distribution of the reconstructed impact position and amplitude varies depending on the impact position and is sensitive to parameters such as the diffusion coefficients and capacitance coupling coefficients. These parameters are tuned by comparing the distributions obtained from simulated data with those from beam test data.

Results and conclusion:

The diffusion coefficients and capacitance coupling coefficients, associated with readout strips and non-readout strips, can be determined by analyzing the distributions of ${\eta }$ $η$ and ${\eta _{2}}$ $η_{2}$ (defined as the center-of-gravity of a cluster of adjacent readout strips and the ratio of the two highest adjacent strip signals, respectively. Their formal definitions are provided in Equations 2 and 3), as well as the relationship between the total ADC and ${\eta }$ $η$ , through comparisons of simulated data and beam test data. After optimizing these parameters, the simulated data show good agreement with the beam test data.