Preparation and characterization of Ti–Zr–V–Cu getter films

期刊论文
发表日期：

2024年2月10日

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Yuchen Yang,
Tao Huang,
Na Wang,
Jia’ou Wang,
Saike Tian,
Sen Yue,
Haichang Duan,
Yongsheng Ma,
Yu Liu,
Jun Ren,
Xiaohua Peng,
Haiyi Dong,
Ping He

摘要

Introduction

Non-evaporable getter is now widely employed in many accelerators to mitigate the resistive-wall effect of the Ti–Zr–V getter coated vacuum chambers in the next generation accelerators.

Methods and discussions

Quaternary Ti–Zr–V–Cu getter films were deposited by direct current (DC) magnetron sputtering. The DC/high frequency impedance and activation kinetics were investigated by four-probes/waveguide methods and in situ synchrotron radiation photoelectron spectroscopy (SRPES).

Conclusions

Compared to Ti–Zr–V films, Ti–Zr–V–Cu films showed better conductivity, which is beneficial to eliminate the resistive-wall effect. However, its initial activation temperature is above 200 °C, and it needs to be activated at a higher temperature to achieve the required pumping performance.