This study focuses on a 60 V trench MOSFET device designed for operation in space radiation environments. By increasing the bulk region concentration and placing the etched gate trench after the P+ implantation process, we successfully reduced the threshold voltage shift from 6.5 to 2.2 V under a total dose of 400 krad(Si) \({}^{60}\hbox {Co}\) , allowing the device to operate normally. Structurally, by embedding the source metal in the active and terminal regions, the device demonstrated current degradation without experiencing single-event burnout when subjected to a drain voltage of 60 V and a linear energy transfer value of \({75.4}\,\hbox {MeV}\cdot \hbox {cm}^2/\hbox {mg}\) from tantalum-ion incidence. TCAD simulations verified that the embedded source metal effectively suppressed parasitic transistor conduction and eliminated the base-region expansion effect, thereby lowering the maximum temperature from 8000 to 1400 K. The irradiation effects of the embedded source metal in the terminal region were also investigated, which can improve the reverse recovery and ensure that the terminal metal does not melt prematurely, thereby significantly enhancing the radiation hardness of the device.
