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<p>This paper quantitatively discusses the influence of well contact on single-event transient (SET) in sub-20&#xa0;nm FinFET by two-photon absorption (TPA) pulse laser. Two groups of inverter chains were designed to investigate the impact of well contact distance on the FinFET process. The experimental results show that the SET pulse width has a bimodal symmetric distribution, which is different from that of a bulk planar CMOS device. To investigate the detailed mechanism of the phenomenon, a high-precision FinFET TCAD model was established, in which both Id-Vd and Id-Vg errors were less than 10% compared to the SPICE model provided by the commercial process. TCAD simulation under heavy ion injection showed the mechanism of the abnormal phenomenon, where the well contact plays a major role in charge collection at the near-well contact distance, while the source plays a major role at the far distance. This phenomenon is completely different from that of planar CMOS devices. This indicates that the SET mechanism becomes more complicated during the FinFET process. Therefore, more effective SET hardening methods should be investigated for FinFET.</p>

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Quantitative investigation of well contact impact on single-event transient in sub-20 nm FinFET process

  • 期刊论文

  • 发表日期：

    2026年1月21日

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  • Qian Sun,
  • Bin Liang,
  • Ya-Qing Chi,
  • Ming Tao,
  • Zhen-Yu Wu,
  • Hong-Xia Guo,
  • Wang-Yong Chen,
  • Jian-Jun Chen,
  • Peng-Cheng Huang,
  • Deng Luo,
  • Han-Han Sun,
  • Ya-Hao Fang,
  • Yu-Lin Gao,
  • Ming-Yan Ma,
  • Yang Guo

摘要

This paper quantitatively discusses the influence of well contact on single-event transient (SET) in sub-20 nm FinFET by two-photon absorption (TPA) pulse laser. Two groups of inverter chains were designed to investigate the impact of well contact distance on the FinFET process. The experimental results show that the SET pulse width has a bimodal symmetric distribution, which is different from that of a bulk planar CMOS device. To investigate the detailed mechanism of the phenomenon, a high-precision FinFET TCAD model was established, in which both Id-Vd and Id-Vg errors were less than 10% compared to the SPICE model provided by the commercial process. TCAD simulation under heavy ion injection showed the mechanism of the abnormal phenomenon, where the well contact plays a major role in charge collection at the near-well contact distance, while the source plays a major role at the far distance. This phenomenon is completely different from that of planar CMOS devices. This indicates that the SET mechanism becomes more complicated during the FinFET process. Therefore, more effective SET hardening methods should be investigated for FinFET.