Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors
摘要
In the research and development of new silicon pixel detectors, a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation. When the beam energy is low, the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test (DUT) must be considered to accurately evaluate the performance of the pixel chips and detectors. This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution, particularly at low beam energies. Simulations were conducted using Allpix