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<p>Two-dimensional (2D) atomic-layered material tungsten diselenide (WSe<sub>2</sub>) has attracted tremendous research attention due to its potential applications in next-generation electronics. In this work, we present a chemical vapor deposition method for synthesizing high-quality monolayer WSe<sub>2</sub> thin films. Through systematic optimization of the selenium precursor supply, uniform monolayer WSe<sub>2</sub> films were achieved with a size of up to 1&#xa0;cm × 1&#xa0;cm. Utilizing these continuous monolayer WSe<sub>2</sub> films, a bottom-gate field-effect transistor (FET) array was fabricated to systematically characterize carrier transport properties, including the On/Off ratio and hole mobility. Electrical characterization of these p-type FET devices revealed a hole mobility of 65 cm<sup>2</sup> V<sup>− 1</sup> s<sup>− 1</sup> and on/off ratio of &gt; 10<sup>7</sup>, which are comparable to those reported for single-crystal WSe<sub>2</sub> FETs. These results demonstrate that the high-performance monolayer WSe<sub>2</sub> FETs establish a viable pathway for integrating 2D materials into next-generation p- type electronics.</p>

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Large-scale uniform WSe2 film with chemical vapor deposition for high-performance P-type field-effect transistors

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • Banqin Ruan,
  • Xusheng Wang,
  • Tingting Guo,
  • Jing Xu,
  • Ahmad Farhan,
  • Runmeng Jia,
  • Haowei Tao,
  • Xuan Chen,
  • Zhiwei Zhang,
  • Yunhai Xiong,
  • Xiufeng Song

摘要

Two-dimensional (2D) atomic-layered material tungsten diselenide (WSe2) has attracted tremendous research attention due to its potential applications in next-generation electronics. In this work, we present a chemical vapor deposition method for synthesizing high-quality monolayer WSe2 thin films. Through systematic optimization of the selenium precursor supply, uniform monolayer WSe2 films were achieved with a size of up to 1 cm × 1 cm. Utilizing these continuous monolayer WSe2 films, a bottom-gate field-effect transistor (FET) array was fabricated to systematically characterize carrier transport properties, including the On/Off ratio and hole mobility. Electrical characterization of these p-type FET devices revealed a hole mobility of 65 cm2 V− 1 s− 1 and on/off ratio of > 107, which are comparable to those reported for single-crystal WSe2 FETs. These results demonstrate that the high-performance monolayer WSe2 FETs establish a viable pathway for integrating 2D materials into next-generation p- type electronics.