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<p>The Low Noise Amplifier (LNA) is the first component appearing on the front end of the receiver systems. The receiver’s performance is largely determined by the performance of LNA. This work presents the design of a cascode-LNA with Graphene Field Effect Transistor (GFET) technology, optimized for the ISM band. The proposed LNA employs a two-stage cascode-LNA to increase the gain of the amplifier with a higher-order matching network. The cascode-LNA, with a two-stage circuit configuration, achieves a small signal gain (S<sub>21</sub>) of 24.73&#xa0;dB and a noise figure of 3.40&#xa0;dB at 2.4&#xa0;GHz. The observed small signal gain and the noise figure for the single-stage cascode-LNA are 12.25&#xa0;dB, and 3.28&#xa0;dB, respectively. These findings highlight the potential of GFET-based LNAs in advancing wireless communication systems, providing a valuable roadmap for future research in this emerging technology.</p>

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A High-Gain Graphene Field Effect Transistor Cascode Low-Noise Amplifier for ISM Band Wireless Communication

  • 期刊论文

  • 发表日期：

    2026年6月29日

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  • Arjun Lal Kumawat,
  • Anukul Pandey,
  • N. S. Raghava

摘要

The Low Noise Amplifier (LNA) is the first component appearing on the front end of the receiver systems. The receiver’s performance is largely determined by the performance of LNA. This work presents the design of a cascode-LNA with Graphene Field Effect Transistor (GFET) technology, optimized for the ISM band. The proposed LNA employs a two-stage cascode-LNA to increase the gain of the amplifier with a higher-order matching network. The cascode-LNA, with a two-stage circuit configuration, achieves a small signal gain (S21) of 24.73 dB and a noise figure of 3.40 dB at 2.4 GHz. The observed small signal gain and the noise figure for the single-stage cascode-LNA are 12.25 dB, and 3.28 dB, respectively. These findings highlight the potential of GFET-based LNAs in advancing wireless communication systems, providing a valuable roadmap for future research in this emerging technology.