A Common Grounded High Step-Up Switched Boost Converter with Low Voltage Stress on Semiconductors
摘要
This investigation evaluates a new structure of a high step-up switched boost (SB) based converter with a small duty ratio with switched capacitor cells. Most conventional converters suffer from high voltage stress on semiconductors when using switched capacitor cells. This converter can reach a higher voltage gain while decreasing voltage stresses with these cells. Therefore, choosing semiconductors with a small internal resistance and voltage rating are possible; hence, the losses and the total costs are decreased. Unlike the previous SB-based converters, this converter is common grounded, and has a lower input current ripple and lower number of passive elements. The output double-capacitor is another advantage that makes the proposed converter operates with a low capacitor voltage range for higher output voltage. A comprehensive comparison of the presented converter with the previous topologies, the mathematical analysis, and the operating principle has been provided. At last, a 200 W experimental results of the proposed converter confirm the accuracy of the claims which are presented.