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<p>The chemical bath deposition (CBD) technique offers a simple and cost-effective route to synthesize CdSe thin films with tailored properties for solar cell applications. Doping the CdSe semiconductor thin films with metal elements is a powerful approach for tuning its absorbance, grain size, morphology and stoichiometric composition. In this study, we employed CBD at 80&#xa0;°C to grow CdSe thin films simultaneously doped with metals Ni and Co at the same atomic ratio of both, exploring the impact of doping on film characterization. Morphological characterization were performed using FE-SEM, images revealed a uniform distribution of soft, ball-like structures. Elemental mapping and EDAX analysis confirmed the presence and distribution of the dopants. XRD, UV and PL studies are also done, where XRD confirms the cubic crystalline structures of both samples and crystal size are calculated. The optical band gap raising approximately 1.96&#xa0;eV undoped to 1.99&#xa0;eV doped CdSe and found the significant decrease in PL intensity with doping. Importantly, the doping of CdSe thin films with Ni and Co is expected to improve the efficiency of solar cell.</p>

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Effect of Simultaneous Ni and Co Doping on the Optical and Structural Properties, and Elemental Distribution of CdSe Thin Films

  • 期刊论文

  • 发表日期：

    2026年4月29日

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  • Divya,
  • Kusumanjali Deshmukh,
  • Jagjeet Kaur Saluja

摘要

The chemical bath deposition (CBD) technique offers a simple and cost-effective route to synthesize CdSe thin films with tailored properties for solar cell applications. Doping the CdSe semiconductor thin films with metal elements is a powerful approach for tuning its absorbance, grain size, morphology and stoichiometric composition. In this study, we employed CBD at 80 °C to grow CdSe thin films simultaneously doped with metals Ni and Co at the same atomic ratio of both, exploring the impact of doping on film characterization. Morphological characterization were performed using FE-SEM, images revealed a uniform distribution of soft, ball-like structures. Elemental mapping and EDAX analysis confirmed the presence and distribution of the dopants. XRD, UV and PL studies are also done, where XRD confirms the cubic crystalline structures of both samples and crystal size are calculated. The optical band gap raising approximately 1.96 eV undoped to 1.99 eV doped CdSe and found the significant decrease in PL intensity with doping. Importantly, the doping of CdSe thin films with Ni and Co is expected to improve the efficiency of solar cell.