<p>This paper presents an analytical investigation of the nonlinear interaction of two microwave beams in a collisional solid-state plasma environment in the presence of an external static magnetic field. To this end, a hydromagnetic model is employed to find the nonlinear response of charged carriers in a magneto active semiconductor plasma. It is demonstrated that the two interactive beams can excite an electromagnetic Alfven wave. The nonlinear current density and excited wave power density are calculated. Furthermore, to have some numerical appreciation, the results obtained in the theoretical formulations are numerically analyzed for two typical semiconductor mediums viz. Ge and n-InSb. Using the typical plasma parameters related to the mentioned mediums the variation of the exciting wave power density is studied and its diagrams are plotted. The results indicate that for both semiconductors, the power carried by the excited Alfven wave gradually increases with the higher density of carriers. Besides, it reduces with enhancing the external magnetic field.</p>