High-Performance Plasmonic Sensor Using Indium Nitride–Tungsten Disulphide Heterostructure for Bio-Sensing Applications
摘要
The performance of a surface plasmon resonance (SPR)-based sensor is investigated theoretically in the presence of a heterostructure composed of indium nitride (InN) and two-dimensional materials. The sensitivity of the four-layer SPR configuration (i.e. BK7 glass/silver/InN/sample medium) is found as 148.64 (0/RIU). After including the heterostructure, the sensitivity enhances by 2.979% for InN–graphene; however, InN-transition metal dichalcogenide (TMDC) provides superior performance. The InN-WS2 heterostructure provides the highest sensitivity among all with a value of 175.838 (0/RIU) which is 18.297% greater than the initial four-layer configuration. Additionally, the improved figure of merit and detection accuracy values are found as 71.771(RIU−1) and 1.135, respectively. The intensity of evanescent electric field at the interface is also maximum and its value is observed 1.73E-04 V/nm at resonance. As a result, the proposed sensor can be used to detect very small refractive index change and also be beneficial for bio-sensing applications.