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<p>Emerging storage technologies are driving progress in high-density data storage and low-power consumption, with promising applications in in-memory computing, neuromorphic computing, data storage, and logic operations. Among them, resistive random-access memory that integrates switching and rectifying functions offers significant advantages by suppressing crosstalk and leakage currents in practical circuitry. Here, a non-volatile molecular-scale self-rectifying memristor is fabricated by sandwiching a novel self-assembled monolayer (SAM) based on the 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO) radical between a monolayer graphene electrode and an Ag electrode. The device achieves both a high resistance On/Off ratio and a high current rectification ratio, each on the order of 10<sup>4</sup>. Mechanistic investigations, supported by ionic liquid gating experiments and theoretical analyses, prove that the device operation is governed by redox processes of the TEMPO radical and its interfacial coupling with graphene. These findings establish an innovative and practical paradigm for guiding the design of molecular memristors.</p>

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Interfacial coupling-enabled non-volatile self-rectifying molecular memristors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年6月17日

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  • Mengmeng Li,
  • Jie Hao,
  • Liren Zhang,
  • Hongyi Zhou,
  • Jinying Wang,
  • Hongyu Ju,
  • Ming-Liang Li,
  • Jinyao Tang,
  • Chuancheng Jia,
  • Xuefeng Guo

摘要

Emerging storage technologies are driving progress in high-density data storage and low-power consumption, with promising applications in in-memory computing, neuromorphic computing, data storage, and logic operations. Among them, resistive random-access memory that integrates switching and rectifying functions offers significant advantages by suppressing crosstalk and leakage currents in practical circuitry. Here, a non-volatile molecular-scale self-rectifying memristor is fabricated by sandwiching a novel self-assembled monolayer (SAM) based on the 2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPO) radical between a monolayer graphene electrode and an Ag electrode. The device achieves both a high resistance On/Off ratio and a high current rectification ratio, each on the order of 104. Mechanistic investigations, supported by ionic liquid gating experiments and theoretical analyses, prove that the device operation is governed by redox processes of the TEMPO radical and its interfacial coupling with graphene. These findings establish an innovative and practical paradigm for guiding the design of molecular memristors.