Room-temperature sensitive electromechanical magnetization reversal with modulation capability approaching 100%

Developing efficient strategies for electrically manipulating two-dimensional magnetism at room temperature is a key challenge in contemporary spintronics. In this study, we demonstrate giant electromechanical control over the magnetism of the room-temperature van der Waals ferromagnet Fe₃GaTe₂ by integrating it with the ferroelectric α-In₂Se₃. Modest gate voltages lead to an almost complete suppression of the coercive field by 96.5%, corresponding to a remarkable peak modulation sensitivity of ∼8.l mT V⁻¹, which stands out among existing van der Waals magnetoelectric systems. Importantly, this substantial magnetoelectric response is predominantly unaffected by voltage polarity, as both positive and negative gate voltages induce similar magnetic modulation effects. To elucidate the underlying mechanism, we tracked the voltage-induced Raman spectral changes, revealing a peak shift of 1.7 cm⁻¹ that accurately represents an effective in-plane tensile strain of ∼l.42% under an equivalent bias, demonstrating polarity independence as well. The synchronized magnetic response and strain variation unequivocally indicate that the induced tensile strain serves as the fundamental physical driver behind the magnetic modulation. Additionally, density functional theory calculations corroborate that the reduction in magnetic anisotropy induced by tensile strain results in a decrease in the coercive field. Our work establishes a novel and efficient approach for achieving voltage control of magnetism at room temperature in van der Waals multiferroic heterostructures, highlighting their significant potential for applications in ultra-low-power magnetic logic and sensing technologies.