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<p>Memristors, which leverage ion migration for resistance switching, offer breakthroughs in bionic perception, information security, and edge computing but face bottlenecks in functional integration and stability. Herein, we explore all-inorganic Cu<sub>3</sub>SbI<sub>6</sub> nanocrystals (NCs) &amp; PMMA composite memristors (Ag/PMMA&amp;Cu<sub>3</sub>SbI<sub>6</sub>/ITO) regulated by NCs doping (0–15 wt%). The devices operate via electric field-induced Ag<sup>+</sup> ion migration and conductive filament dynamics, where NCs act as local electric field enhancers. At a doping concentration of 4 wt%, stable bipolar switching (<i>R</i><sub>on</sub>/<i>R</i><sub>off</sub> &gt; 2 × 10<sup>3</sup>, cycling endurance &gt; 700 cycles) enables the simulation of biological nociception/Pavlovian reflexes and the construction of basic logic gates. At 2 wt%, sparse NCs induce random filament formation for encryption key extraction, which integrates with 4 wt% logic gates to enable efficient encryption/decryption of text/image data. This work provides a strategy for designing multifunctional memristors by regulating ion transport through nanocrystal concentration, offering references for related functional integration and cross-disciplinary applications.</p>

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Concentration-driven ion transport regulated perovskite nanocrystal memristors enable reliable neuromorphic sensing, logic gate circuits, and data security

  • 期刊论文

  • 发表日期：

    2026年2月25日

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  • Shiji Zhao,
  • Junjie Feng,
  • Yuchan Wang,
  • Lei Zheng,
  • Ting Chen,
  • Wenxia Zhang,
  • Zhitang Song

摘要

Memristors, which leverage ion migration for resistance switching, offer breakthroughs in bionic perception, information security, and edge computing but face bottlenecks in functional integration and stability. Herein, we explore all-inorganic Cu3SbI6 nanocrystals (NCs) & PMMA composite memristors (Ag/PMMA&Cu3SbI6/ITO) regulated by NCs doping (0–15 wt%). The devices operate via electric field-induced Ag+ ion migration and conductive filament dynamics, where NCs act as local electric field enhancers. At a doping concentration of 4 wt%, stable bipolar switching (Ron/Roff > 2 × 103, cycling endurance > 700 cycles) enables the simulation of biological nociception/Pavlovian reflexes and the construction of basic logic gates. At 2 wt%, sparse NCs induce random filament formation for encryption key extraction, which integrates with 4 wt% logic gates to enable efficient encryption/decryption of text/image data. This work provides a strategy for designing multifunctional memristors by regulating ion transport through nanocrystal concentration, offering references for related functional integration and cross-disciplinary applications.