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<p>Zirconia (ZrO<sub>2</sub>)-based fluorite dioxide ferroelectric materials have shown great potential for nonvolatile storage logic devices. Compared to hafnium dioxide (HfO<sub>2</sub>), ZrO<sub>2</sub> offers a lower material cost and possesses more abundant natural reserves. In this study, we prepared ferroelectric ZrO<sub>2</sub> thin films on niobium-doped strontium titanate (NSTO) substrates with different crystallographic orientations by chemical solution deposition (CSD) and systematically analyzed their structural and ferroelectric properties. Through a combination of simulation and experimentation, we discovered that the ferroelectric orthorhombic-phase (o-phase) of ZrO<sub>2</sub> films on NSTO substrates with specific orientations appears to be selectively crystallized. Among them, the ZrO<sub>2</sub> film on NSTO (110) substrate has the highest content of ferroelectric o-phase with a high remanent polarization value (2<i>P</i><sub>r</sub> = 92.64 µC/cm<sup>2</sup>). Notably, even after resistive-capacitive (RC) delay calibration, the 2<i>P</i><sub>r</sub> value remained at a high level of up to 88.54 µC/cm<sup>2</sup>. The device demonstrates an approximate durability of 10<sup>7</sup> cycles, exhibiting favourable fatigue characteristics. We present a novel approach to ferroelectric phase modulation by utilizing the substrate orientation to control the in-plane tensile strain, which promotes the epitaxial growth of the ferroelectric o-phase. Additionally, X-ray absorption spectroscopy (XAS) analysis reveals the distortion of Zr-O tetrahedra, providing a microscopic perspective for understanding the ferroelectricity of ZrO<sub>2</sub> films. The findings of this study not only provide a novel strategy for the property tuning of ZrO<sub>2</sub> films, but also provide a reliable support for the application of ZrO<sub>2</sub>-based ferroelectric materials in storage and logic devices.</p>

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Strain modulation of ZrO2 ferroelectric thin films for achieving superior polarization

  • 期刊论文

  • 发表日期：

    2025年12月10日

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  • Menglin Li,
  • Xiuqiao Liu,
  • Hangren Li,
  • Jie Tu,
  • Longyuan Shi,
  • Qianqian Yang,
  • Meng Yuan,
  • Siyuan Du,
  • Jing Xia,
  • Xiangmin Meng,
  • Jianjun Tian,
  • Linxing Zhang

摘要

Zirconia (ZrO2)-based fluorite dioxide ferroelectric materials have shown great potential for nonvolatile storage logic devices. Compared to hafnium dioxide (HfO2), ZrO2 offers a lower material cost and possesses more abundant natural reserves. In this study, we prepared ferroelectric ZrO2 thin films on niobium-doped strontium titanate (NSTO) substrates with different crystallographic orientations by chemical solution deposition (CSD) and systematically analyzed their structural and ferroelectric properties. Through a combination of simulation and experimentation, we discovered that the ferroelectric orthorhombic-phase (o-phase) of ZrO2 films on NSTO substrates with specific orientations appears to be selectively crystallized. Among them, the ZrO2 film on NSTO (110) substrate has the highest content of ferroelectric o-phase with a high remanent polarization value (2Pr = 92.64 µC/cm2). Notably, even after resistive-capacitive (RC) delay calibration, the 2Pr value remained at a high level of up to 88.54 µC/cm2. The device demonstrates an approximate durability of 107 cycles, exhibiting favourable fatigue characteristics. We present a novel approach to ferroelectric phase modulation by utilizing the substrate orientation to control the in-plane tensile strain, which promotes the epitaxial growth of the ferroelectric o-phase. Additionally, X-ray absorption spectroscopy (XAS) analysis reveals the distortion of Zr-O tetrahedra, providing a microscopic perspective for understanding the ferroelectricity of ZrO2 films. The findings of this study not only provide a novel strategy for the property tuning of ZrO2 films, but also provide a reliable support for the application of ZrO2-based ferroelectric materials in storage and logic devices.