<p>Layered transition metal tellurides (TMT) show potential for development into high-performance cathode materials for aqueous zinc ion batteries, yet their holistic performance metrics (e.g., specific capacity, rate capability, stability) remain substantially distant from practical utilization. Herein, we employed a straightforward and efficient NaBH₄-assisted chemical etching method to generate abundant Te vacancies on the surface of Bi₂Te₃ (termed H-Bi₂Te₃). Our experimental and theoretical investigations reveal that these abundant Te vacancies refine the band structure of H-Bi₂Te₃, enhance its electrical conductivity, and remarkably decrease the diffusion barrier for zinc ions. Moreover, these Te vacancies offer increased storage sites for Zn ions. Consequently, the H-Bi₂Te₃ material showcased superior performance in zinc-ion storage, exhibiting rapid zinc storage kinetics (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(D_{\text{Zn}^{2+}}\)</EquationSource> <EquationSource Format="MATHML"><math display="block"> <msub> <mi>D</mi> <mrow> <msup> <mtext>Zn</mtext> <mrow> <mn>2</mn> <mo>+</mo> </mrow> </msup> </mrow> </msub> </math></EquationSource> </InlineEquation> of 3.98×10⁻¹¹ cm² s⁻¹), a noteworthy specific capacity (325 mAh g⁻¹ at 0.1 A g⁻¹), impressive rate characteristics (217 mAh g⁻¹ at 1 A g⁻¹), and exceptional cyclic stability (retaining a capacity of 70 mAh g⁻¹ after 10000 cycles at 1 A g⁻¹). This work not only presents a novel strategy focused on vacancy defect engineering on TMT-based cathode materials in AZIBs, but also opens up possibilities for exploring broader applications of vacancy-rich TMT materials.</p>