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<p>Inorganic perovskite solar cells (IPSCs) have garnered significant research interest in recent years owing to their excellent light and thermal stability, as well as their potential applications in tandem solar cells. However, the power conversion efficiency (PCE) and stability of IPSCs are often compromised by residual lattice stress and numerous defects at interfaces and within the bulk material, which lead to severe nonradiative recombination of photogenerated carriers. To address these challenges, we developed a zero-dimensional supramolecular complex, (ETP)<sub>2</sub>SbCl<sub>5</sub>, serving as both a dual interface and bulk modifier to regulate the growth of inorganic CsPbI<sub>3</sub> perovskite films. The (ETP)<sub>2</sub>SbCl<sub>5</sub> modifier exhibits a unique spatial distribution: the ETP<sup>+</sup> cations preferentially anchor at the buried interface, passivating defects on both TiO<sub>2</sub> and perovskite surfaces, while Sb<sup>3+</sup> and Cl<sup>−</sup> ions diffuse into the perovskite bulk during annealing, effectively relieving residual lattice stress. Moreover, Cl<sup>−</sup> anions accumulate on the top surface of the CsPbI<sub>3</sub> film, passivating cation defects. Consequently, the (ETP)<sub>2</sub>SbCl<sub>5</sub>-modified CsPbI<sub>3</sub> IPSC achieves a high-quality active layer with significantly reduced defects and suppressed energy loss, an impressive PCE of 21.71% and a high open circuit voltage of 1.27 V, remaining 97.4% of their initial efficiency after 500 h of continuous maximum power point (MPP) tracking.</p>

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Three birds with one stone: dual-interfaces and bulk co-passivation enable >21% efficiency of CsPbI3 solar cells with VOC of 1.27 V

  • 期刊论文

  • 发表日期：

    2025年10月24日

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  • Na Zhang,
  • Ziwei Xu,
  • Zhou Yang,
  • Lu Zhang,
  • Zihao Fan,
  • Dongfang Xu,
  • Fei Wang,
  • Ningyi Yuan,
  • Jianning Ding,
  • Jian Cui,
  • Zhike Liu

摘要

Inorganic perovskite solar cells (IPSCs) have garnered significant research interest in recent years owing to their excellent light and thermal stability, as well as their potential applications in tandem solar cells. However, the power conversion efficiency (PCE) and stability of IPSCs are often compromised by residual lattice stress and numerous defects at interfaces and within the bulk material, which lead to severe nonradiative recombination of photogenerated carriers. To address these challenges, we developed a zero-dimensional supramolecular complex, (ETP)2SbCl5, serving as both a dual interface and bulk modifier to regulate the growth of inorganic CsPbI3 perovskite films. The (ETP)2SbCl5 modifier exhibits a unique spatial distribution: the ETP+ cations preferentially anchor at the buried interface, passivating defects on both TiO2 and perovskite surfaces, while Sb3+ and Cl− ions diffuse into the perovskite bulk during annealing, effectively relieving residual lattice stress. Moreover, Cl− anions accumulate on the top surface of the CsPbI3 film, passivating cation defects. Consequently, the (ETP)2SbCl5-modified CsPbI3 IPSC achieves a high-quality active layer with significantly reduced defects and suppressed energy loss, an impressive PCE of 21.71% and a high open circuit voltage of 1.27 V, remaining 97.4% of their initial efficiency after 500 h of continuous maximum power point (MPP) tracking.