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<p>The optimization of device performance through tunable elemental doping is one of the appealing aspects of semiconductors. Compared with heavy doping, light doping is more efficient and allows for the precise regulation of material properties and the tailoring of band structures. In this study, a facile plasma-enhanced chemical vapor deposition technology is employed to fabricate a series of Sn-doped Ga<sub>2</sub>O<sub>3</sub> films (Sn:Ga=0–1.14 at.%). The conductivity of the films, along with the atypical Schottky-type junction behavior observed at the Ti/Sn-Ga<sub>2</sub>O<sub>3</sub> interface, can be modulated by varying the concentrations of oxygen vacancy (O<sub>II</sub>), and coordinately influence the carrier transport processes and the detection performance of the corresponding Au/Ti/Sn-Ga<sub>2</sub>O<sub>3</sub>/Ti/Au photodetectors. Notably, as the O<sub>II</sub> concentration increases to 38.88%, the interfacial Schottky barrier height decreases to 0.54 eV, which facilitates electron tunneling and promotes a superior responsivity reaching 1880 mA/W. Conversely, a reduced O<sub>II</sub> concentration of 30% reinforces the barrier height (0.70 eV), which in turn restricts the dark current (28.4 pA) while improving the detectivity to 1.44×10<sup>13</sup> Jones and the photo-to-dark current ratio to 3.42×10<sup>4</sup>. This research highlights the importance of balancing doping concentration with performance optimization and illustrates the significant potential of interface engineering in regulating electronic transport behavior and device performance.</p>

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Sn doping induced interfacial barrier height tailoring in Ga2O3 deep-ultraviolet photodetector

  • 期刊论文

  • 发表日期：

    2025年9月8日

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  • Lili Yang,
  • Shan Li,
  • Muzi Li,
  • Maolin Zhang,
  • Zeng Liu,
  • Zhang Zhang,
  • Weihua Tang

摘要

The optimization of device performance through tunable elemental doping is one of the appealing aspects of semiconductors. Compared with heavy doping, light doping is more efficient and allows for the precise regulation of material properties and the tailoring of band structures. In this study, a facile plasma-enhanced chemical vapor deposition technology is employed to fabricate a series of Sn-doped Ga2O3 films (Sn:Ga=0–1.14 at.%). The conductivity of the films, along with the atypical Schottky-type junction behavior observed at the Ti/Sn-Ga2O3 interface, can be modulated by varying the concentrations of oxygen vacancy (OII), and coordinately influence the carrier transport processes and the detection performance of the corresponding Au/Ti/Sn-Ga2O3/Ti/Au photodetectors. Notably, as the OII concentration increases to 38.88%, the interfacial Schottky barrier height decreases to 0.54 eV, which facilitates electron tunneling and promotes a superior responsivity reaching 1880 mA/W. Conversely, a reduced OII concentration of 30% reinforces the barrier height (0.70 eV), which in turn restricts the dark current (28.4 pA) while improving the detectivity to 1.44×1013 Jones and the photo-to-dark current ratio to 3.42×104. This research highlights the importance of balancing doping concentration with performance optimization and illustrates the significant potential of interface engineering in regulating electronic transport behavior and device performance.