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<p>IV–VI dilute magnetic semiconductor Mn-doped GeTe has garnered significant attention for its promising thermoelectric (TE) properties in the mid-temperature range. However, the impact of Mn on the transport properties of GeTe remains ambiguous. This study investigates the critical role of Mn doping in optimizing the TE properties of Ge<sub>1−<i>x</i></sub>Mn<sub><i>x</i></sub>Te alloys. The transport properties, magnetic properties, and lattice vibration behavior were characterized in the temperature range of 50–300 K. It was demonstrated that the incorporation of Mn significantly reduces carrier concentration and amplifies electron scattering, thereby optimizing the power factor with a two-fold increment. Apart from the enhanced alloy scattering, Mn doping causes the softening of optical phonons and reduced phonon group velocity, therefore, a remarkable suppression in lattice thermal conductivity. Furthermore, the ferromagnetism of Mn contributes to the TE performance of Ge<sub>1−<i>x</i></sub>Mn<sub><i>x</i></sub>Te as it benefits from the depressed phonon modes of magnetic excitation. This work provides a strategic insight into optimizing TE performance for advancing GeTe-based dilute magnetic semiconductors.</p>

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Ferromagnetism enhancing thermoelectric transport properties in dilute magnetic semiconductor Ge1−xMnxTe

  • 期刊论文

  • 发表日期：

    2025年7月4日

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  • Xiaofeng Chen,
  • Ping Wei,
  • Tiantian Chen,
  • Xianfeng Ye,
  • Junjie Ge,
  • Zhixin Tang,
  • Wanting Zhu,
  • Xiaolei Nie,
  • Danqi He,
  • Mingrui Liu,
  • Wenyu Zhao,
  • Qingjie Zhang

摘要

IV–VI dilute magnetic semiconductor Mn-doped GeTe has garnered significant attention for its promising thermoelectric (TE) properties in the mid-temperature range. However, the impact of Mn on the transport properties of GeTe remains ambiguous. This study investigates the critical role of Mn doping in optimizing the TE properties of Ge1−xMnxTe alloys. The transport properties, magnetic properties, and lattice vibration behavior were characterized in the temperature range of 50–300 K. It was demonstrated that the incorporation of Mn significantly reduces carrier concentration and amplifies electron scattering, thereby optimizing the power factor with a two-fold increment. Apart from the enhanced alloy scattering, Mn doping causes the softening of optical phonons and reduced phonon group velocity, therefore, a remarkable suppression in lattice thermal conductivity. Furthermore, the ferromagnetism of Mn contributes to the TE performance of Ge1−xMnxTe as it benefits from the depressed phonon modes of magnetic excitation. This work provides a strategic insight into optimizing TE performance for advancing GeTe-based dilute magnetic semiconductors.