<p>Semiconductor nanowires (NWs) have been extensively applied in light sources, waveguides, photodetectors (PDs), etc., which provide abundant components for optoelectronic interconnection applications. However, the efficient in-plane integration of various devices remains challenging, which is a prerequisite for the practical application of NWs. Here, the growth-based integration of CsPbBr₃ NW arrays with CdSSe ribbons transferred onto mica is achieved via a vapor deposition route. The transferred ribbons not only act as preferential nucleation sites for CsPbBr₃, but also break the growth symmetry of CsPbBr₃ NWs on mica, allowing wires with the largest angle to the ribbon edge to grow longer and form arrays. The waveguide studies show that the CsPbBr₃ NW arrays can confine and guide the light emission from both themselves and the CdSSe ribbon well. Importantly, the optoelectronic interconnection was successfully demonstrated based on the achieved heterostructures, where the CsPbBr₃ NWs served as the light source and waveguide, and PDs were made from the CdSSe ribbon. When a single CsPbBr₃ NW was illuminated by a focused 457 nm laser at a distance of 37.5 µm from the CdSSe ribbon, the on/off ratio of the system reached 8.3×10³, resulting from the efficient response of the PD to the guided light. Moreover, the system can distinguish the pulsed light excitation well below 2000 Hz, limited by the response speed of the PDs. This work paves the way for the on-chip integration of nanoscale light emitters, waveguides, and detectors, promoting the practical application of semiconductor NWs in photonic circuits.</p>