Scholarlink

<p>In strongly correlated transition metal oxide (TMO) systems, the anomalous Hall effect (AHE) can not only reveal the underlying physical mechanism of the coupling between multiple degrees of freedom, but also generate spin current-driven magnetization switching. However, enhancing the AHE in this system remains a significant challenge at present. This work systematically investigates the electronic transport properties of SrIrO<sub>3</sub>/NiCo<sub>2</sub>O<sub>4</sub> (SIO/NCO) heterostructures, showing that the AHE of SIO/NCO heterostructures is enhanced by an order of magnitude compared to the ferrimagnetic NCO single film. The enhancement of AHE is more significant as the thickness of the SIO sublayer decreases, which is attributed to the fact that large strain exacerbates the interfacial charge transfer. This is demonstrated through the variation of binding energies and concentrations of electronic states in the X-ray photoelectron spectroscopy. Moreover, the AHE in SIO/NCO heterostructures arises from the synergistic effect of the intrinsic mechanism dominated by Berry curvature and the extrinsic mechanism caused by impurity scattering. This finding paves the way for advancing the reliability of TMO-based spintronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhancement of anomalous Hall effect in SrIrO3/NiCo2O4 heterostructures induced by interfacial charge transfer

  • 期刊论文

  • 发表日期：

    2025年5月26日

查看全文
  • Penghua Kang,
  • Guowei Zhou,
  • Ye Zhao,
  • Guoxiu Ren,
  • Jiahui Ji,
  • Chao Jin,
  • Xiaohong Xu

摘要

In strongly correlated transition metal oxide (TMO) systems, the anomalous Hall effect (AHE) can not only reveal the underlying physical mechanism of the coupling between multiple degrees of freedom, but also generate spin current-driven magnetization switching. However, enhancing the AHE in this system remains a significant challenge at present. This work systematically investigates the electronic transport properties of SrIrO3/NiCo2O4 (SIO/NCO) heterostructures, showing that the AHE of SIO/NCO heterostructures is enhanced by an order of magnitude compared to the ferrimagnetic NCO single film. The enhancement of AHE is more significant as the thickness of the SIO sublayer decreases, which is attributed to the fact that large strain exacerbates the interfacial charge transfer. This is demonstrated through the variation of binding energies and concentrations of electronic states in the X-ray photoelectron spectroscopy. Moreover, the AHE in SIO/NCO heterostructures arises from the synergistic effect of the intrinsic mechanism dominated by Berry curvature and the extrinsic mechanism caused by impurity scattering. This finding paves the way for advancing the reliability of TMO-based spintronic devices.